tm july 2008 FDB150N10 n-channel powertrench ? mosfet ?2008 fairchild semiconductor corporation FDB150N10 rev. a www.fairchildsemi.com 1 FDB150N10 n-channel powertrench ? mosfet 100v, 57a, 15m ? features ?r ds(on) = 12m ? ( typ.) @ v gs = 10v, i d = 49a ? fast switching speed ? low gate charge ? high performance trench tec hnology for extremely low r ds(on) ? high power and current handling capability ? rohs compliant general description this n-channel mosfet is produced using fairchild semiconductor?s advanced powert rench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. application ? dc to dc convertors / synchronous rectification d g s d 2 -pak g s d mosfet maximum ratings t c = 25 o c unless otherwise noted thermal characteristics symbol parameter ratings units v dss drain to source voltage 100 v v gss gate to source voltage 20 v i d drain current -continuous (t c = 25 o c) 57 a -continuous (t c = 100 o c) 40 a i dm drain current - pulsed (note 1) 228 a e as single pulsed avalanche energy (note 2) 132 mj dv/dt peak diode recovery dv/dt (note 3) 7.5 v/ns p d power dissipation (t c = 25 o c) 110 w - derate above 25 o c0.88w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter ratings units r jc thermal resistance, junction to case 1.13 o c/w r ja thermal resistance, junction to ambient 62.5
FDB150N10 n-channel powertrench ? mosfet FDB150N10 rev. a www.fairchildsemi.com 2 package marking and ordering information t c = 25 o c unless otherwise noted electrical characteristics off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FDB150N10 FDB150N10 d2-pak 330mm 24mm 800 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t c = 25 o c 100 - - v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c-0.1-v/ o c i dss zero gate voltage drain current v ds = 100v, v gs = 0v - - 1 a v ds = 100v, v gs = 0v, t c = 150 o c - - 500 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a2.5-4.5v r ds(on) static drain to source on resistance v gs = 10v, i d = 49a - 12 15 m ? g fs forward transconductance v ds = 20v, i d = 49a (note 4) - 156 - s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 3580 4760 pf c oss output capacitance - 340 450 pf c rss reverse transfer capacitance - 140 210 pf t d(on) turn-on delay time v dd = 50v, i d = 49a v gs = 10v, r gen = 25 ? (note 4, 5) - 47 104 ns t r turn-on rise time - 164 338 ns t d(off) turn-off delay time - 86 182 ns t f turn-off fall time - 83 176 ns q g(tot) total gate charge at 10v v ds = 80v, i d = 49a v gs = 10v (note 4, 5) -5369nc q gs gate to source gate charge - 19 - nc q gd gate to drain ?miller? charge - 15 - nc i s maximum continuous drain to source diode forward current - - 57 a i sm maximum pulsed drain to source diode forward current - - 228 a v sd drain to source diode forward voltage v gs = 0v, i sd = 49a - - 1.3 v t rr reverse recovery time v gs = 0v, i sd = 49a di f /dt = 100a/ s (note 4) -41-ns q rr reverse recovery charge - 70 - nc notes: 1: repetitive rating: pulse width limit ed by maximum junction temperature 2: l = 0.11mh, i as = 49a, v dd = 50v, r g = 25 ? , starting t j = 25c 3: i sd 49a, di/dt 200a/ s, v dd bv dss , starting t j = 25c 4: pulse test: pulse width 300 s, duty cycle 2% 5: essentially independent of operating temperature typical characteristics
FDB150N10 n-channel powertrench ? mosfet FDB150N10 rev. a www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 10 100 0.02 *notes: 1. 250 s pulse test 2. t c = 25 o c v gs = 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v v ds ,drain-source voltage[v] i d ,drain current[a] 500 2 345678 1 10 100 1000 25 o c -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test v gs ,gate-source voltage[v] i d ,drain current[a] 0.20.40.60.81.01.21.41.6 1 10 100 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 500 0 100 200 300 5 10 15 20 25 30 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ m ? ] , drain-source on-resistance i d , drain current [a] 0 102030405060 0 2 4 6 8 10 *note: i d = 49a v ds = 25v v ds = 50v v ds = 80v v gs , gate-source voltage [v] q g , total gate charge [nc] 0.1 1 10 0 1000 2000 3000 4000 5000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 30
FDB150N10 n-channel powertrench ? mosfet FDB150N10 rev. a www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.90 0.95 1.00 1.05 1.10 1.15 *notes: 1. v gs = 0v 2. i d = 250ua bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.4 0.8 1.2 1.6 2.0 2.4 *notes: 1. v gs = 10v 2. i d = 49a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 1 10 100 0.01 0.1 1 10 100 500 10 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse 200 dc 25 50 75 100 125 150 0 10 20 30 40 50 60 70 i d , drain current [a] t c , case temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 110 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 1.13 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] 2 t 1 p dm t 2
FDB150N10 n-channel powertrench ? mosfet FDB150N10 rev. a www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FDB150N10 n-channel powertrench ? mosfet FDB150N10 rev. a www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FDB150N10 n-channel powertrench ? mosfet FDB150N10 rev. a www.fairchildsemi.com 7 mechanical dimensions d2-pak dimensions in millimeters
FDB150N10 n-channel powertrench ? mosfet FDB150N10 rev. a www.fairchildsemi.com 8 rev. i34 trademarks the following includes register ed and unregistered trademarks and service marks, ow ned by fairchild semiconductor and/or its gl obal subsidianries, and is not intended to be an exhaustive list of all such trademarks. * ezswitch? and flashwriter ? are trademarks of system general corporati on, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further no tice to any products herein to improve reliability, function, or design. fa irchild does not assume any liability arising out of the application or use of any product or circuit descri bed herein; neither does it convey any license under its patent rights, nor the rights of others. these spec ifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically th e warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express wr itten approval of fairchild semiconductor corporation. as used herein: 1. life support devices or system s are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose fail ure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? ecospark ? efficentmax? ezswitch? * ? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green fps? green fps? e-series? gto? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? millerdrive? motionmax? motion-spm? optologic ? optoplanar ? ? pdp-spm? power-spm? powertrench ? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world 1mw at a time? smartmax? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 supermos? ? the power franchise ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? serdes? uhc ? ultra frfet? unifet? vcx? visualmax? tm ? tm tm datasheet identification product status definition advance information formative or in design this datasheet contains the design s pecifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminar y data; supplementary data will be pub- lished at a later date. fairchild semic onductor reserves the right to make changes at any time without notice to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production this datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only.
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